Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method

ABSTRACT

A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

This application is a continuation of U.S. patent application Ser. No.13/586,689, filed Aug. 15, 2012, now allowed, which claims priority andbenefit under 35 U.S.C. §119(e) to U.S. Provisional Patent ApplicationNo. 61/524,644, filed on Aug. 17, 2011 and to U.S. Provisional PatentApplication No. 61/546,883, filed on Oct. 13, 2011. The content of eachof the foregoing applications is incorporated herein in its entirety byreference.

FIELD

The present invention relates to a support table for a lithographicapparatus, a lithographic apparatus and a method for manufacturing adevice using a lithographic apparatus.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In that instance, a patterning device, whichis alternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.comprising part of, one, or several dies) on a substrate (e.g. a siliconwafer). Transfer of the pattern is typically via imaging onto a layer ofradiation-sensitive material (resist) provided on the substrate. Ingeneral, a single substrate will contain a network of adjacent targetportions that are successively patterned. Known lithographic apparatusinclude so-called steppers, in which each target portion is irradiatedby exposing an entire pattern onto the target portion at one time, andso-called scanners, in which each target portion is irradiated byscanning the pattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate.

It has been proposed to immerse the substrate in the lithographicprojection apparatus in a liquid having a relatively high refractiveindex, e.g. water, so as to fill a space between the final element ofthe projection system and the substrate. In an embodiment, the liquid isdistilled water, although another liquid can be used. An embodiment ofthe invention will be described with reference to liquid. However,another fluid may be suitable, particularly a wetting fluid, anincompressible fluid and/or a fluid with higher refractive index thanair, desirably a higher refractive index than water. Fluids excludinggases are particularly desirable. The point of this is to enable imagingof smaller features since the exposure radiation will have a shorterwavelength in the liquid. (The effect of the liquid may also be regardedas increasing the effective numerical aperture (NA) of the system andalso increasing the depth of focus.) Other immersion liquids have beenproposed, including water with solid particles (e.g. quartz) suspendedtherein, or a liquid with a nano-particle suspension (e.g. particleswith a maximum dimension of up to 10 nm). The suspended particles may ormay not have a similar or the same refractive index as the liquid inwhich they are suspended. Other liquids which may be suitable include ahydrocarbon, such as an aromatic, a fluorohydrocarbon, and/or an aqueoussolution.

Submersing the substrate or substrate and substrate table in a bath ofliquid (see, for example, U.S. Pat. No. 4,509,852) means that there is alarge body of liquid that must be accelerated during a scanningexposure. This requires additional or more powerful motors andturbulence in the liquid may lead to undesirable and unpredictableeffects.

In an immersion apparatus, immersion fluid is handled by a fluidhandling system, device structure or apparatus. In an embodiment thefluid handling system may supply immersion fluid and therefore be afluid supply system. In an embodiment the fluid handling system may atleast partly confine immersion fluid and thereby be a fluid confinementsystem. In an embodiment the fluid handling system may provide a barrierto immersion fluid and thereby be a barrier member, such as a fluidconfinement structure. In an embodiment the fluid handling system maycreate or use a flow of gas, for example to help in controlling the flowand/or the position of the immersion fluid. The flow of gas may form aseal to confine the immersion fluid so the fluid handling structure maybe referred to as a seal member; such a seal member may be a fluidconfinement structure. In an embodiment, immersion liquid is used as theimmersion fluid. In that case the fluid handling system may be a liquidhandling system. In reference to the aforementioned description,reference in this paragraph to a feature defined with respect to fluidmay be understood to include a feature defined with respect to liquid.

SUMMARY

Utilizing immersion fluid in a lithographic apparatus may introducecertain difficulties. For example, the use of immersion fluid may resultin an additional heat load within the lithographic apparatus, which mayaffect the accuracy of formation of an image on a substrate.

In some instances the heat load may be non-uniform across a substrate,resulting in non-uniform variation of the image. By way of example, aheat load may be caused by operation of a fluid handling system and/orby evaporation of the immersion fluid. These effects may be localized toa part of a substrate. Consequently, there may be a localizedtemperature change in the substrate, resulting in a localized thermalexpansion or contraction of the substrate. This is turn may result in alocalized variation in a overlay error and/or critical dimension (CD).

It is desirable, for example, to provide a system in which the effect ofa localized heat load can be reduced.

According to an aspect of the invention, there is provided a supporttable for a lithographic apparatus, comprising: a support section,configured to support a lower surface of a substrate on an upper facethereof; and a conditioning system, configured to supply heat energy toand/or remove heat energy from the support section; wherein, when asubstrate is supported by the support section, it is thermally coupledto the support section such that, when the conditioning system suppliesheat energy to or removes heat energy from the support section, energyin turn transfers from the support section to the substrate or to thesupport section from the substrate, respectively; and the supportsection, the conditioning system, or both, is configured such that theheat transfer to or from the substrate per unit area of the substrate asa result of the operation of the conditioning system is greater in afirst region of the substrate that is adjacent the edge of the substratethan it is in a second region of the substrate that is at the center ofthe substrate.

According to an aspect of the invention, there is provided a supporttable for a lithographic apparatus, the support table comprising:

a support section, configured to support a lower surface of a substrateon an upper surface of the support section, the upper surface of thesupport section comprising a base surface, configured to besubstantially parallel to the lower surface of the substrate whensupported on the support section, and comprising a plurality of burlsprotruding from the base surface and arranged such that, when thesubstrate is supported by the support section, the substrate is only incontact with the upper surface of the burls,

wherein the burls are configured such that the stiffness of the burls ina direction parallel to the upper surface of the support section isgreater for burls in contact with a first region of the substrate thatis adjacent to an edge of the substrate than for burls in contact with asecond region of the substrate that is at the center of the substrate,and the stiffness of the burls in a direction perpendicular to the upperface of the support section is substantially the same for burls incontact with the first and second regions of the substrate.

According to an aspect of the invention, there is provided alithographic apparatus, comprising: a support table, configured tosupport a substrate; a conditioning system, configured to supply heatenergy to and/or remove heat energy from the support table; a positionmeasurement system, configured to measure the position of the supporttable within the lithographic apparatus; and a controller, configured tocontrol the conditioning system to supply heat energy to and/or removeheat energy from the support table based on information including themeasured position of the support table.

According to an aspect of the invention, there is provided alithographic apparatus, comprising: a support table, configured tosupport a substrate; a conditioning system, configured to supply heatenergy to and/or remove heat energy from the support table; and acontroller, configured to control the conditioning system to supply heatenergy and/or remove heat energy from the support table, the controllerconfigured such that, when the support table is at a location for asubstrate to be loaded to the support table, it controls theconditioning system to start to supply heat energy to and/or remove heatenergy from the support table that is expected to be required before thesubstrate is loaded to the support table.

According to an aspect of the invention, there is provided a devicemanufacturing method, comprising using a lithographic apparatus totransfer a pattern from a patterning device to a substrate, wherein thelithographic apparatus comprises a support table configured to supportthe substrate, a conditioning system configured to supply heat energy toand/or remove heat energy from the support table, and a positionmeasurement system configured to measure the position of the supporttable within the lithographic apparatus, the method comprising:controlling the conditioning system to supply heat energy to and/orremove heat energy from the support table based on information includingthe measured position of the support table.

According to an aspect of the invention, there is provided a devicemanufacturing method, comprising using a lithographic apparatus totransfer a pattern from a patterning device to a substrate, wherein thelithographic apparatus comprises a support table configured to supportthe substrate, and a conditioning system configured to supply heatenergy to and/or remove heat energy from the support table, the methodcomprising: controlling the conditioning system to supply heat energy toand/or remove heat energy from the support table that is expected to berequired before the substrate is loaded to the support table.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 depicts a lithographic apparatus according to an embodiment ofthe invention;

FIGS. 2 and 3 depict a liquid supply system for use in a lithographicprojection apparatus;

FIG. 4 depicts a further liquid supply system for use in a lithographicprojection apparatus;

FIG. 5 depicts a further liquid supply system for use in a lithographicprojection apparatus;

FIG. 6 depicts, in cross-section, a further liquid supply system for usein a lithographic projection apparatus;

FIG. 7 depicts, in cross-section, a support table that may be used in anembodiment of the invention;

FIG. 8 depicts, in plan view, an arrangement of a support table that maybe used in an embodiment of the invention;

FIG. 9 depicts, in plan view, a support table according to an embodimentof the invention;

FIGS. 10 and 11 depict, in plan view, details of a part of a supporttable according to an embodiment of the invention;

FIGS. 12 through 21 each depict, in cross-section, details of supporttables that may be used according to embodiments of the invention;

FIG. 22 depicts a substrate handling apparatus that may be used in anembodiment of the invention;

FIG. 23 depicts, in plan view, part of a support table according to anembodiment of the invention;

FIG. 24 depicts, in cross-section, a part of a support table accordingto an embodiment of the invention; and

FIG. 25 depicts, in cross-section, a detail of a support table accordingto an embodiment of the invention.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to oneembodiment of the invention. The apparatus comprises:

an illumination system (illuminator) IL configured to condition aradiation beam B (e.g. UV radiation or DUV radiation);

a support structure (e.g. a mask table) MT constructed to support apatterning device (e.g. a mask) MA and connected to a first positionerPM configured to accurately position the patterning device MA inaccordance with certain parameters;

a support table, e.g. a sensor table to support one or more sensors or asubstrate table WT constructed to hold a substrate (e.g. a resist-coatedsubstrate) W, connected to a second positioner PW configured toaccurately position the surface of the table, for example of a substrateW, in accordance with certain parameters; and

a projection system (e.g. a refractive projection lens system) PSconfigured to project a pattern imparted to the radiation beam B bypatterning device MA onto a target portion C (e.g. comprising one ormore dies) of the substrate W.

The illumination system IL may include various types of opticalcomponents, such as refractive, reflective, magnetic, electromagnetic,electrostatic or other types of optical components, or any combinationthereof, for directing, shaping, or controlling radiation.

The support structure MT holds the patterning device MA. It holds thepatterning device MA in a manner that depends on the orientation of thepatterning device MA, the design of the lithographic apparatus, andother conditions, such as for example whether or not the patterningdevice MA is held in a vacuum environment. The support structure MT canuse mechanical, vacuum, electrostatic or other clamping techniques tohold the patterning device MA. The support structure MT may be a frameor a table, for example, which may be fixed or movable as required. Thesupport structure MT may ensure that the patterning device MA is at adesired position, for example with respect to the projection system PS.Any use of the terms “reticle” or “mask” herein may be consideredsynonymous with the more general term “patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device MA may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two or more tables(or stage or support), e.g., two or more substrate tables or acombination of one or more substrate tables and one or more cleaning,sensor or measurement tables. For example, in an embodiment, thelithographic apparatus is a multi-stage apparatus comprising two or moretables located at the exposure side of the projection system, each tablecomprising and/or holding one or more objects. In an embodiment, one ormore of the tables may hold a radiation-sensitive substrate. In anembodiment, one or more of the tables may hold a sensor to measureradiation from the projection system. In an embodiment, the multi-stageapparatus comprises a first table configured to hold aradiation-sensitive substrate (i.e., a substrate table) and a secondtable not configured to hold a radiation-sensitive substrate (referredto hereinafter generally, and without limitation, as a measurement,sensor and/or cleaning table). The second table may comprise and/or mayhold one or more objects, other than a radiation-sensitive substrate.Such one or more objects may include one or more selected from thefollowing: a sensor to measure radiation from the projection system, oneor more alignment marks, and/or a cleaning device (to clean, e.g., theliquid confinement structure).

In such “multiple stage” (or “multi-stage”) machines the multiple tablesmay be used in parallel, or preparatory steps may be carried out on oneor more tables while one or more other tables are being used forexposure. The lithographic apparatus may have two or more patterningdevice tables (or stages or support) which may be used in parallel in asimilar manner to substrate, cleaning, sensor and/or measurement tables.

In an embodiment, the lithographic apparatus may comprise an encodersystem to measure the position, velocity, etc. of a component of theapparatus. In an embodiment, the component comprises a substrate table.In an embodiment, the component comprises a measurement and/or sensorand/or cleaning table. The encoder system may be in addition to or analternative to the interferometer system described herein for thetables. The encoder system comprises a sensor, transducer or readheadassociated, e.g., paired, with a scale or grid. In an embodiment, themovable component (e.g., the substrate table and/or the measurementand/or sensor and/or cleaning table) has one or more scales or grids anda frame of the lithographic apparatus with respect to which thecomponent moves has one or more of sensors, transducers or readheads.The one or more of sensors, transducers or readheads cooperate with thescale(s) or grid(s) to determine the position, velocity, etc. of thecomponent. In an embodiment, a frame of the lithographic apparatus withrespect to which a component moves has one or more scales or grids andthe movable component (e.g., the substrate table and/or the measurementand/or sensor and/or cleaning table) has one or more of sensors,transducers or readheads that cooperate with the scale(s) or grid(s) todetermine the position, velocity, etc. of the component.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source SO and the lithographic apparatus may beseparate entities, for example when the source SO is an excimer laser.In such cases, the source SO is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDcomprising, for example, suitable directing mirrors and/or a beamexpander. In other cases the source SO may be an integral part of thelithographic apparatus, for example when the source SO is a mercurylamp. The source SO and the illuminator IL, together with the beamdelivery system BD if required, may be referred to as a radiationsystem.

The illuminator IL may comprise an adjuster AD for adjusting the angularintensity distribution of the radiation beam. Generally, at least theouter and/or inner radial extent (commonly referred to as σ-outer andσ-inner, respectively) of the intensity distribution in a pupil plane ofthe illuminator IL can be adjusted. In addition, the illuminator IL maycomprise various other components, such as an integrator IN and acondenser CO. The illuminator IL may be used to condition the radiationbeam, to have a desired uniformity and intensity distribution in itscross-section. Similar to the source SO, the illuminator IL may or maynot be considered to form part of the lithographic apparatus. Forexample, the illuminator IL may be an integral part of the lithographicapparatus or may be a separate entity from the lithographic apparatus.In the latter case, the lithographic apparatus may be configured toallow the illuminator IL to be mounted thereon. Optionally, theilluminator IL is detachable and may be separately provided (forexample, by the lithographic apparatus manufacturer or anothersupplier).

The radiation beam B is incident on the patterning device (e.g., mask)MA, which is held on the support structure (e.g., mask table) MT, and ispatterned by the patterning device MA. Having traversed the patterningdevice MA, the radiation beam B passes through the projection system PS,which focuses the beam onto a target portion C of the substrate W. Withthe aid of the second positioner PW and position sensor IF (e.g. aninterferometric device, linear encoder or capacitive sensor), thesubstrate table WT can be moved accurately, e.g. so as to positiondifferent target portions C in the path of the radiation beam B.Similarly, the first positioner PM and another position sensor (which isnot explicitly depicted in FIG. 1) can be used to accurately positionthe patterning device MA with respect to the path of the radiation beamB, e.g. after mechanical retrieval from a mask library, or during ascan. In general, movement of the support structure MT may be realizedwith the aid of a long-stroke module (coarse positioning) and ashort-stroke module (fine positioning), which form part of the firstpositioner PM. Similarly, movement of the substrate table WT may berealized using a long-stroke module and a short-stroke module, whichform part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the support structure MT may be connected to ashort-stroke actuator only, or may be fixed. Patterning device MA andsubstrate W may be aligned using patterning device alignment marks M1,M2 and substrate alignment marks P1, P2. Although the substratealignment marks as illustrated occupy dedicated target portions, theymay be located in spaces between target portions C (these are known asscribe-lane alignment marks). Similarly, in situations in which morethan one die is provided on the patterning device MA, the patterningdevice alignment marks may be located between the dies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the support structure MT and the substrate table WT arekept essentially stationary, while an entire pattern imparted to theradiation beam B is projected onto a target portion C at one time (i.e.a single static exposure). The substrate table WT is then shifted in theX and/or Y direction so that a different target portion C can beexposed. In step mode, the maximum size of the exposure field limits thesize of the target portion C imaged in a single static exposure.

2. In scan mode, the support structure MT and the substrate table WT arescanned synchronously while a pattern imparted to the radiation beam Bis projected onto a target portion C (i.e. a single dynamic exposure).The velocity and direction of the substrate table WT relative to thesupport structure MT may be determined by the (de-)magnification andimage reversal characteristics of the projection system PS. In scanmode, the maximum size of the exposure field limits the width (in thenon-scanning direction) of the target portion C in a single dynamicexposure, whereas the length of the scanning motion determines theheight (in the scanning direction) of the target portion C.

3. In another mode, the support structure MT is kept essentiallystationary holding a programmable patterning device, and the substratetable WT is moved or scanned while a pattern imparted to the radiationbeam is projected onto a target portion C. In this mode, generally apulsed radiation source is employed and the programmable patterningdevice is updated as required after each movement of the substrate tableWT or in between successive radiation pulses during a scan. This mode ofoperation can be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of atype as referred to above.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications in manufacturing components with microscale, or evennanoscale, features, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc.

Arrangements for providing liquid between a final element of theprojection system PS and the substrate can be classed into three generalcategories. These are the bath type arrangement, the so-called localizedimmersion system and the all-wet immersion system. In a bath typearrangement substantially the whole of the substrate W and optionallypart of the substrate table WT is submersed in a bath of liquid.

A localized immersion system uses a liquid supply system in which liquidis only provided to a localized area of the substrate. The space filledby liquid is smaller in plan than the top surface of the substrate andthe area filled with liquid remains substantially stationary relative tothe projection system PS while the substrate W moves underneath thatarea. FIGS. 2-6 show different supply devices which can be used in sucha system. A sealing feature is present to seal liquid to the localizedarea. One way which has been proposed to arrange for this is disclosedin PCT patent application publication no. WO 99/49504.

In an all wet arrangement the liquid is unconfined. The whole topsurface of the substrate and all or part of the substrate table iscovered in immersion liquid. The depth of the liquid covering at leastthe substrate is small. The liquid may be a film, such as a thin film,of liquid on the substrate. Immersion liquid may be supplied to or inthe region of a projection system and a facing surface facing theprojection system (such a facing surface may be the surface of asubstrate and/or a substrate table). Any of the liquid supply devices ofFIGS. 2-5 can also be used in such a system. However, a sealing featureis not present, not activated, not as efficient as normal or otherwiseineffective to seal liquid to only the localized area.

As illustrated in FIGS. 2 and 3, liquid is supplied by at least oneinlet onto the substrate, preferably along the direction of movement ofthe substrate relative to the final element. Liquid is removed by atleast one outlet after having passed under the projection system. As thesubstrate is scanned beneath the element in a −X direction, liquid issupplied at the +X side of the element and taken up at the −X side. FIG.2 shows the arrangement schematically in which liquid is supplied viainlet and is taken up on the other side of the element by outlet whichis connected to a low pressure source. In the illustration of FIG. 2 theliquid is supplied along the direction of movement of the substraterelative to the final element, though this does not need to be the case.Various orientations and numbers of in- and out-lets positioned aroundthe final element are possible; one example is illustrated in FIG. 3 inwhich four sets of an inlet with an outlet on either side are providedin a regular pattern around the final element. Note that the directionof flow of the liquid is shown by arrows in FIGS. 2 and 3.

A further immersion lithography solution with a localized liquid supplysystem is shown in FIG. 4. Liquid is supplied by two groove inlets oneither side of the projection system PS and is removed by a plurality ofdiscrete outlets arranged radially outwardly of the inlets. The inletscan be arranged in a plate with a hole in its centre and through whichthe projection beam is projected. Liquid is supplied by one groove inleton one side of the projection system PS and removed by a plurality ofdiscrete outlets on the other side of the projection system PS, causinga flow of a thin film of liquid between the projection system PS and thesubstrate W. The choice of which combination of inlet and outlets to usecan depend on the direction of movement of the substrate W (the othercombination of inlet and outlets being inactive). Note that thedirection of flow of fluid and of the substrate is shown by arrows inFIG. 4.

Another arrangement which has been proposed is to provide the liquidsupply system with a liquid confinement structure which extends along atleast a part of a boundary of the space between the final element of theprojection system and the substrate table. Such an arrangement isillustrated in FIG. 5.

In an embodiment, the lithographic apparatus comprises a liquidconfinement structure that has a liquid removal device having an inletcovered with a mesh or similar porous material. The mesh or similarporous material provides a two-dimensional array of holes contacting theimmersion liquid in a space between the final element of the projectionsystem and a movable table (e.g., the substrate table). In anembodiment, the mesh or similar porous material comprises a honeycomb orother polygonal mesh. In an embodiment, the mesh or similar porousmaterial comprises a metal mesh. In an embodiment, the mesh or similarporous material extends all the way around the image field of theprojection system of the lithographic apparatus. In an embodiment, themesh or similar porous material is located on a bottom surface of theliquid confinement structure and has a surface facing towards the table.In an embodiment, the mesh or similar porous material has at least aportion of its bottom surface generally parallel with a top surface ofthe table.

FIG. 5 schematically depicts a localized liquid supply system or fluidhandling structure 12, which extends along at least a part of a boundaryof the space between the final element of the projection system and thesubstrate table WT or substrate W. (Please note that reference in thefollowing text to surface of the substrate W also refers in addition orin the alternative to a surface of the substrate table, unless expresslystated otherwise.) The fluid handling structure 12 is substantiallystationary relative to the projection system in the XY plane thoughthere may be some relative movement in the Z direction (in the directionof the optical axis). In an embodiment, a seal is formed between thefluid handling structure 12 and the surface of the substrate W and maybe a contactless seal such as a gas seal (such a system with a gas sealis disclosed in European patent application publication no.EP-A-1,420,298) or liquid seal.

The fluid handling structure 12 at least partly contains liquid in thespace 11 between a final element of the projection system PS and thesubstrate W. A contactless seal 16 to the substrate W may be formedaround the image field of the projection system PS so that liquid isconfined within the space between the substrate W surface and the finalelement of the projection system PS. The space 11 is at least partlyformed by the fluid handling structure 12 positioned below andsurrounding the final element of the projection system PS. Liquid isbrought into the space below the projection system PS and within thefluid handling structure 12 by liquid inlet 13. The liquid may beremoved by liquid outlet 13. The fluid handling structure 12 may extenda little above the final element of the projection system. The liquidlevel rises above the final element so that a buffer of liquid isprovided. In an embodiment, the fluid handling structure 12 has an innerperiphery that at the upper end closely conforms to the shape of theprojection system or the final element thereof and may, e.g., be round.At the bottom, the inner periphery closely conforms to the shape of theimage field, e.g., rectangular, though this need not be the case.

The liquid may be contained in the space 11 by a gas seal 16 which,during use, is formed between the bottom of the fluid handling structure12 and the surface of the substrate W. The gas seal is formed by gas.The gas in the gas seal is provided under pressure via inlet 15 to thegap between the fluid handling structure 12 and substrate W. The gas isextracted via outlet 14. The overpressure on the gas inlet 15, vacuumlevel on the outlet 14 and geometry of the gap are arranged so thatthere is a high-velocity gas flow 16 inwardly that confines the liquid.The force of the gas on the liquid between the fluid handling structure12 and the substrate W contains the liquid in a space 11. Theinlets/outlets may be annular grooves which surround the space 11. Theannular grooves may be continuous or discontinuous. The flow of gas 16is effective to contain the liquid in the space 11. Such a system isdisclosed in United States patent application publication no. US2004-0207824, which is hereby incorporated by reference in its entirety.In an embodiment, the fluid handling structure 12 does not have a gasseal.

FIG. 6 illustrates a fluid handling structure 12 which is part of aliquid supply system. The fluid handling structure 12 extends around theperiphery (e.g. circumference) of the final element of the projectionsystem PS.

A plurality of openings 23 in the surface which in part defines thespace 11 provides the liquid to the space 11. The liquid passes throughopenings 29, 23 in side walls 28, 32 respectively through respectivechambers 34, 36 prior to entering the space 11.

A seal is provided between the bottom of the fluid handling structure 12and a facing surface, e.g. the substrate W, or a substrate table WT, orboth. In FIG. 6 a seal device is configured to provide a contactlessseal and is made up of several components. Radially outwardly from theoptical axis of the projection system PS, there is provided a (optional)flow control plate 53 which extends into the space 11. The control plate53 may have an opening 55 to permit flow liquid therethrough; theopening 55 may be beneficial if the control plate 53 is displaced in theZ direction (e.g., parallel to the optical axis of the projection systemPS). Radially outwardly of the flow control plate 53 on the bottomsurface of the fluid handling structure 12 facing (e.g., opposite) thefacing surface, e.g., the substrate W, may be an opening 180. Theopening 180 can provide liquid in a direction towards the facingsurface. During imaging this may be useful in preventing bubbleformation in the immersion liquid by filling a gap between the substrateW and substrate table WT with liquid.

Radially outwardly of the opening 180 may be an extractor assembly 70 toextract liquid from between the fluid handling structure 12 and thefacing surface. The extractor assembly 70 may operate as a single phaseor as a dual phase extractor. The extractor assembly 70 acts as ameniscus pinning feature of a meniscus 320 of the liquid.

Radially outwardly of the extractor assembly may be a gas knife 90. Anarrangement of the extractor assembly and gas knife is disclosed indetail in United States patent application publication no. US2006/0158627 incorporated herein in its entirety by reference.

The extractor assembly 70 as a single phase extractor may comprise aliquid removal device, extractor or inlet such as the one disclosed inUnited States patent application publication no. US 2006-0038968,incorporated herein in its entirety by reference. In an embodiment, theliquid removal device 70 comprises an inlet 120 which is covered in aporous material 111 which is used to separate liquid from gas to enablesingle-liquid phase liquid extraction. An underpressure in chamber 121is chosen such that the meniscuses formed in the holes of the porousmaterial 111 prevent ambient gas from being drawn into the chamber 121of the liquid removal device 70. However, when the surface of the porousmaterial 111 comes into contact with liquid there is no meniscus torestrict flow and the liquid can flow freely into the chamber 121 of theliquid removal device 70.

The porous material 111 has a large number of small holes each with adimension, e.g. a width, such as a diameter, in the range of 5 to 50micrometers. The porous material 111 may be maintained at a height inthe range of 50 to 300 micrometers above a surface, such as a facingsurface, from which liquid is to be removed, e.g. the surface of asubstrate W. In an embodiment, porous material 111 is at least slightlyliquidphilic, i.e. having a dynamic contact angle of less than 90°,desirably less than 85° or desirably less than 80°, to the immersionliquid, e.g. water.

Radially outward of gas knife 90 may be provided one or more outlets 210to remove gas from gas knife 90 and/or liquid that may escape past thegas knife 90. The one or more outlets 210 may be located between one ormore outlets of the gas knife 90. To facilitate channeling of fluid (gasand/or liquid) to the outlet 210, a recess 220 may be provided in theliquid confinement structure 12 that is directed toward outlet 210 fromoutlets of the gas knife 90 and/or from between outlets of the gas knife90.

Although not specifically illustrated in FIG. 6, the liquid supplysystem has an arrangement to deal with variations in the level of theliquid. This is so that liquid which builds up between the projectionsystem PS and the liquid confinement structure 12 (and forms a meniscus400) can be dealt with and does not escape. One way of dealing with thisliquid is to provide a lyophobic (e.g., hydrophobic) coating. Thecoating may form a band around the top of the fluid handling structure12 surrounding the opening and/or around the last optical element of theprojection system PS. The coating may be radially outward of the opticalaxis of the projection system PS. The lyophobic (e.g., hydrophobic)coating helps keep the immersion liquid in the space 11. Additionally oralternatively, one or more outlets 201 may be provided to remove liquidreaching a certain high relative to the structure 12.

Another localized area arrangement is a fluid handling structure whichmakes use of a gas drag principle. The so-called gas drag principle hasbeen described, for example, in United States patent applicationpublication nos. US 2008-0212046, US 2009-0279060 and US 2009-0279062.In that system the extraction holes are arranged in a shape which maydesirably have a corner. The corner may be aligned with a preferreddirection of movement, such as the stepping or the scanning direction.This reduces the force on the meniscus between two openings in thesurface of the fluid handing structure for a given speed in thepreferred direction compared to if the two outlets were alignedperpendicular to the preferred direction. However, an embodiment of theinvention may be applied to a fluid handling system which in plan hasany shape, or has a component such as the extraction openings arrangedin any shape. Such a shape in a non-limiting list may include an ellipsesuch as a circle, a rectilinear shape such as a rectangle, e.g. asquare, or a parallelogram such as a rhombus or a cornered shape withmore than four corners such as a four or more pointed star.

In a variation of the system of US 2008/0212046 A1, to which anembodiment of the present invention may relate, the geometry of thecornered shape in which the openings are arranged allows sharp corners(between about 60° and 90°, desirably between 75° and 90° and mostdesirably between 75° and 85°) to be present for the corners alignedboth in the scan and in the stepping directions. This allows increasedspeed in the direction of each aligned corner. This is because thecreation of liquid droplets due to an unstable meniscus, for example inexceeding a critical speed, in the scanning direction is reduced. Wherecorners are aligned with both the scanning and stepping directions,increased speed may be achieved in those directions. Desirably the speedof movement in the scanning and stepping directions may be substantiallyequal.

Within a lithographic apparatus, a substrate may be supported on asupport table. In particular, the support table may include a supportsection that is configured to support a lower surface of the substrate.An upper face of the support section may, for example, include a basesurface having a plurality of burls protruding from base surface. Thelower surface of the substrate may be supported on the upper faces ofthe burls. Such an arrangement may minimize or reduce the total area ofthe substrate in contact with the support table, minimizing or reducingthe likelihood of contaminants being transferred between the supporttable and the substrate and/or minimizing or reducing the likelihood ofa contaminant being located between the substrate and its support on thesupport table, which may result in a deformation of the substrate.

In an embodiment, the space around the burls, below the substrate, maybe connected to an under-pressure source. Accordingly, the substrate maybe vacuum clamped to the support table.

In the event of a local heat load acting on the substrate and/or thesupport table, there may be a local temperature variation within, forexample, the substrate, resulting in a local thermal expansion orthermal contraction, most significantly in a direction parallel to theupper and lower major faces of the substrate. However, the thermalexpansion and/or thermal contraction of the substrate may be resisted bythe support table, to which the substrate is clamped. In particular, theforces to resist the thermal expansion and/or thermal contraction may beapplied to the substrate via the burls.

In a region towards the center of the substrate, there are burls inevery direction around each local part of the substrate. Thesesurrounding burls may provide the forces to resist a thermal expansionand/or thermal contraction. However, in regions around the edge of thesubstrate, there is only contact with burls in directions towards thecenter of the substrate. In other words, there are no forces applied toa region of the substrate to resist a thermal expansion and/or thermalcontraction from beyond the edge of the substrate.

Consequently, for a given temperature change of a local area of thesubstrate, the net thermal expansion or contraction of the substrate,namely after taking into account the resistance to expansion orcontraction provided by the contact with the burls, will be greater inregions close to the edge of a substrate than in the center of thesubstrate.

This effect applies not only to thermal expansion and/or contractioncaused by a local heat load and/or local temperature change of thesubstrate but also to a heat load and/or temperature change that appliesuniformly across the substrate.

In order to reduce or minimize temperature change within a substrate, aconditioning system may be provided that supplies heat energy to and/orremoves heat energy from the support section of the support table.Accordingly, heat can be supplied or removed in order to compensate fora heat load on the substrate and/or support table. The conditioningsystem may provide heat directly to or remove heat directly from thesupport section to compensate for a heat load on the support table.Furthermore, the conditioning system may provide heat to or remove heatfrom the support section such that heat flows from the support sectionto the substrate, or from the substrate to the support section, in orderto compensate for a heat load on the substrate.

In an embodiment of the present invention, the support section, theconditioning system, or both, is configured such that, during use, heattransfer to or from the substrate resulting from the operation of theconditioning system is not uniform across the substrate.

In particular, in an embodiment, the system is configured such that theheat transfer to or from the substrate per unit area of the substrate isgreater in one or more regions of the substrate at the edge of thesubstrate than in one or more regions located at or near the center ofthe substrate. In other words, the support section and/or conditioningsystem are configured such that the effect of the conditioning system isgreater at the edge region of a substrate than in the central region.

Such a system may be configured such that, for a given heat load, thetemperature change of a substrate in its edge region may be less thanthe temperature change of the substrate in its central region. This maycompensate for the variation discussed above in the resulting thermalexpansion and/or thermal contraction across a substrate for a givenlocal temperature change. Accordingly, the variation in the resultingexpansion and/or contraction of the substrate across the substrate maybe reduced or minimized.

Described below are different embodiments that may result in greaterheat transfer to or from the substrate per unit area of the substrate inan edge region than the central region of a substrate during operationof the conditioning system.

There may be a gradual change from one or more edge regions, in whichthe effect of the conditioning system is maximized or increased, to oneor more inner regions of a substrate in which the effect of theconditioning system is not as great.

In an embodiment of the invention, the support section and/orconditioning system may be configured such that there is a cleardistinction between an edge region in which the effect of theconditioning system is greater, and a central region, in which theeffect of the conditioning system is relatively reduced.

In either case, the arrangement of the relative locations of the edgeand central regions may be selected appropriately in order that thevariation in effect of the conditioning system best compensates for thevariation in the thermal expansion and/or thermal contraction of asubstrate in response to a local temperature change, as discussed above.

A support table according to an embodiment of the present invention mayutilize any combination of these aspects.

FIG. 7 schematically depicts a support table WT in which an embodimentof the invention may be provided. The embodiment depicted in FIG. 7 issimplified and features of a substrate table not required to explain anembodiment of the present invention are not depicted. Nevertheless, asupport table of an embodiment of the present invention may include manysuch additional features.

As shown, the support table WT may include a support section 22 that isconfigured to support a substrate W. In particular, the substrate W maybe supported by means of a plurality of burls 20. The support table WTfurther includes a conditioning system 21 that supplies heat energy toand/or removes heat energy from the support section 22.

The substrate W is thermally coupled to the support section 22, forexample by means of heat conduction through the burls 20 that are inphysical contact with the lower surface of the substrate W. In otherwords, when the conditioning system 21 supplies heat energy to orremoves heat energy from the support section 22, energy in turntransfers from the support section to the substrate or to the supportsection from the substrate, respectively.

As discussed below, the support section 22 and/or the conditioningsystem 21 are configured such that, during operation, heat transfer toor from the substrate per unit area of the substrate is greater in afirst, outer, region 26 of the substrate W, namely one that is adjacentto the edge of the substrate W, than it is in a second, inner, region 27of the substrate. For convenience of description, it will be appreciatedthat the support section 22 includes an outer region 24 that is adjacentto, and thermally coupled to, the outer region 26 of the substrate W.The support section further includes an inner region 25 that is adjacentto, and thermally coupled to, the inner region 27 of the substrate W.

FIG. 8 schematically depicts an embodiment of the invention. As shown,the conditioning system 21 includes a heater system 30 that can provideto the support section more heat energy per unit area of the upper faceof the support section 22 in the outer region 24 than in the innerregion 25.

As shown in FIG. 9, in an embodiment, such a heater system may includeat least first and second heater units 30 a, 30 b that are independentlycontrollable, for example by a controller 31. At least one heater unit30 a may be configured to provide heat to the outer region 24 of thesupport section 22 and at least one other heater unit 30 b may beconfigured to provide heat energy to the inner region 25 of the supportsection 22.

By controlling the heater units 30 a, 30 b independently, greater heatenergy per unit area of the upper face of the support section 22 may beprovided to the outer region 24 than the inner region 25. For example,the heater units 30 a, 30 b may be electric heaters of similarconstruction, such as resistive heaters. In that case, the controller 31may be configured such that, in operation, the electric current providedto the heater unit 30 a heating the outer region 24 of the supportsection 22 is greater than the electric current provided to the heaterunit 30 b providing heat to the inner region 25 of the support section22. In an embodiment, thin film heaters may be used. A thin film heatermay comprise a heating element formed as a thin layer for example. Thethin film heaters may be applied by glue or as a coating for example.

Alternatively or additionally, the heater system 30 may be configuredsuch that, for a common input, the heat generated per unit area of theupper face of the support section 22 is greater in the outer region 24than in the inner region 25.

For example, if the heater system 30 comprises an elongate electricheating element, for example a resistive heating element, the heatingsystem may be configured such that there is a greater length of heatingelement per unit area of the upper face of the support section 22 in theouter region 24 than in the inner region 25.

Such a system may enable the use of a single heating unit, such as asingle elongate electric heating element to provide heat to both theouter region 24 and the inner region 25. This may be achieved by adifference in the arrangement of the electric heating element in theouter and inner regions 24, 25. Advantageously such a system may onlyrequire a single controller.

FIGS. 10 and 11 depict arrangements of such an embodiment. In each case,a portion of the support section 22 is shown, together with portions ofan elongate electric heating element 32 that is used to form the heatingsystem 30.

As shown in FIG. 10, a greater length of heating element per heatingarea of the upper face of the support section 22 may be achieved in theouter region 24 by reducing the separation between adjacent sections ofthe elongate electric heating element 32 in comparison to the innerregion 25.

Alternatively or additionally, as shown in FIG. 11, in an arrangement inwhich the elongate electric heating element 32 is provided along ameandering path, the meanders of the elongate electric heating element32 may be more tightly arranged in the outer region 24 than in the innerregion 25.

In an embodiment, the conditioning system may comprise a channel 35within the support section 22. A conditioning fluid may be provided toflow through the channel 35. The conditioning system may include aconditioning unit (not shown) that supplies the conditioning fluid tothe channel, optionally drives the conditioning fluid through thechannel, for example following a path through a plurality of regions ofthe support section 22, and removes the conditioning fluid once it hascompleted the path within the support section 22. The conditioning unitmay include a heater and/or a cooler in order to adjust the temperatureof the conditioning fluid supplied to the channel 35 in order that theconditioning fluid may provide heat to the support section 22 and/orremove heat from the support section 22 as it flows along the paththrough the support section 22.

In an embodiment, the path for the channel 35 may be configured suchthat the channel passes through at least the outer region 24 and theinner region 25 of the support section 22. As depicted in FIG. 12 thechannel 35 may pass through one or both of the regions a plurality oftimes.

In an embodiment, a section 36 of the channel 35 within the outer region24 of the support section 22 may be modified in order to increase theheat transfer from the conditioning fluid within the modified section 36of the channel 35 to the outer region 24 of the support section 22 incomparison with the heat transfer from the conditioning fluid inunmodified sections of the channel 35 within the inner region 25 of thesupport section 22.

In an embodiment, the modified section 36 of the channel 35 may have asmaller cross-sectional area than the sections of the channel 35 withinthe inner region 25 of the support section 22. This will result in thevelocity of the conditioning fluid within the modified section 36 of thechannel 35 being larger than the velocity of the conditioning fluid inthe unmodified sections of the channel 35, in order that the volume flowrate is the same. As a consequence of the increase in velocity,turbulence in the conditioning fluid may be increased, increasing theheat transfer between the conditioning fluid and the support sectionwhere it passes through the modified section 36 of the channel 35.

Alternatively or additionally, the modified section 36 of the channel 35may be configured such that the surface roughness of the channel in themodified section 36 is greater than in the unmodified section of thechannel 35. Again, this may increase the heat transfer between theconditioning fluid and the support section in the outer region 24 incontrast to the transfer within the inner region 25. For example, thesurface roughness may induce turbulence in the flow.

Alternatively or additionally, the path along which the modified section36 of the channel 35 passes within the outer region 24 may be configuredto have a greater number of corners and/or have sharper corners than incomparison to the unmodified section of the channel 35 within the innerregion 25 of the support section 22. This may increase the turbulence ofthe flow of the conditioning fluid in the modified section 36 of thechannel 35, again increasing the heat transfer between the conditioningfluid and the support section 22 in the outer region 24.

Alternatively or additionally, as specifically depicted in FIG. 12, themodified section 36 of the channel 35 within the outer region 24 of thesupport section 22 may be arranged such that the perimeter of thecross-section of the modified section 36 of channel 35 is greater thanthe unmodified section of channel 35 within the inner region 25 of thesupport section 22. Increasing the perimeter of the cross-section of themodified section 36 of the channel 35 results in an increase in thecontact area between the conditioning fluid and the support section 22for a given unit area of the upper face of the support section 22 in theouter region 24 in comparison with the inner region 25.

By appropriate selection of the shape of the cross-section of thechannel 35 in the modified section 36, it is possible to have anincreased perimeter of the cross-section of the channel 35 in comparisonwith a non-modified section of the channel 35 but still have a smallertotal cross-sectional area of the channel 35 in a modified section 36 incomparison with an unmodified section. This may, for example, beachieved by selecting a cross-section having a shape in which at least apart has a relatively high aspect ratio.

In an embodiment, the path for the channel conveying the conditioningfluid may be configured such that the separation between adjacentsections 37 of the channel 35 within the outer region 24 of the supportsection 22 is less than the separation between adjacent sections of thechannel 35 in the inner region 25. As before, this may increase the heattransfer between the conditioning fluid and the outer region 24 of thesupport section 22 in contrast with the heat transfer between theconditioning fluid and the inner region 25 of the support section 22.

Such an arrangement may be arranged such that the total volume of thechannel 35 corresponding to a given area of the upper face of thesupport section 22 is greater in the outer region 24 than in the innerregion 25, increasing the heat transfer in the outer region 24 incomparison with the inner region 25.

As shown in FIG. 13, such an arrangement may be achieved in total, evenif the cross-sectional area of each of the sections 37 of the channel 35within the outer region 24 are smaller than the cross-sectional area ofsections of the channel 35 within the inner region 25 of the supportsection 22. Accordingly, one may have the combined benefit of a greatervolume of conditioning fluid passing through a region of the supportsection 22 corresponding to a given area of the upper face of thesupport section 22 in the outer region 24 in comparison with the innerregion 25 while also providing a higher conditioning fluid velocity inthe sections 37 of the channel 35 within the outer region 24 incomparison with that in the inner region 25 of the support section 22with the benefit discussed above.

In an embodiment, a section of the channel 35 may divide into parallelsub-channels. For example, part-way along the channel 35 a part of itmay branch into two or more sections. This may provide adjacent sections37 of the channel 35, for example as shown in FIG. 13.

Alternatively or additionally, as specifically depicted in FIG. 14, achannel heater 53 may be provided in, adjacent to, or surrounding one ormore of the channels 35. The channel heater 53 may comprise a pluralityof heaters. The spatial density of the plurality of heaters may bearranged to be higher in the outer region 24 than in the inner region25. In an embodiment, the heaters may be more closely spaced in theouter region 24 than in the inner region. In an embodiment, the heatersmay be larger, for example longer, in the outer region 24 than in theinner region 25. In an embodiment, the heaters may surround the channelsto a greater extent in the outer region 24 than in the inner region 25.In an embodiment, the heaters may be arranged to supply heat to agreater proportion of the surface area of the channels 35 in the outerregion 24 than in the inner region 25 (e.g. by being more closelyspaced, longer and/or by surrounding the channels 35 to a greaterextent). A higher spatial density of heaters may be able to supply ahigher heating power per unit area of the support section 22 in theouter region 24 in comparison with the inner region 25 without requiringa complex control system to adjust the heating powers of individualheaters. In an embodiment, the heating power supplied to the heaters isthe same for each heater or the same per unit area of heater.

In an embodiment, in which a conditioning fluid is provided to a channelwithin the support section 22, one may alternatively or additionally,configure the conditioning system such that the conditioning fluid isprovided to an end of the channel 35 within the outer region 24 of thesupport section 22 and is extracted from an end of the channel 35 withinthe inner region 25 of the support section 22. Accordingly, theconditioning fluid may first pass through sections of the channel 35within the outer region 24 of the support section 22. During this stage,the temperature difference between the conditioning fluid and thesupport section 22 may be at its greatest (disregarding variations intemperature across the support section 22, the temperature differencewill decrease along the length of the channel 35 as heat transfersbetween the support section and the conditioning fluid). Accordingly,the rate of heat transfer may be at its greatest in the region throughwhich the conditioning fluid passes first. Therefore, in an arrangementas discussed above, the rate of heat transfer between the conditioningfluid and the support section 22 may be larger in the outer region 24than in the inner region 25 of the support section 22.

In an embodiment, for example discussed below, the support section 22may be configured such that in the outer region 24 there is reducedresistance to transfer of heat energy between the support section 22 andthe substrate W in comparison with the inner region 25.

As discussed above, the support section 22 may include a plurality ofburls 20 that support the lower surface of the substrate W. The burls 20also provide the least resistance path for thermal transfer between thesupport section 22 and the substrate W, by thermal conduction throughthe burls 20.

In an embodiment, the burls 20 are arranged such that the total area ofthe burls 20 in contact with the substrate W per unit area of thesubstrate W and/or the upper face of the support section 22 is greaterin the outer region 24 than in the inner region 25. Accordingly, thepercentage of the area of the substrate W in contact with a burl 20,such that heat can be transferred between the burls 20 and the substrateW, is greater in the outer region 24 than in the inner region 25.

In an embodiment, as depicted in FIG. 15, this difference in theproportion of the area of the substrate in contact with a burl may beprovided by using differently sized burls 20 a, 20 b for the outer andinner regions 24, 25 of the support section 22. In particular, the areaof each burl 20 a in contact with the lower surface of the substrate Wmay be larger in the outer region 24 than the area of the burls 20 b incontact with the lower surface of the substrate W in the inner region25.

Alternatively or additionally, as depicted in FIG. 16, in an embodiment,the total area of burls 20 in contact with the lower surface of thesubstrate W per unit area of the substrate W may be varied across thesupport section 22 by adjusting the spacing of the burls 20. Forexample, as depicted in FIG. 16, the spacing between the burls 20 in theouter region 24 may be reduced in comparison with the spacing of theburls 20 in the inner region 25. Accordingly, the total number of burls20 per unit area of the upper surface of the support section 22 may belarger in the outer region 24 than in the inner region 25.

Arrangements such as those described above in which there is adistribution across the substrate W of the total area of burls 20 incontact with the lower surface of the substrate W per unit area of thesubstrate W could cause deformation of the substrate W. In particular,such an arrangement may result in a variation in the distribution ofsupport forces provided by the burls 20 across the substrate W. This inturn may cause a variation in the deformation of the burls 20 such thateven support of the substrate W may not be provided. In an embodiment,such a variation may be partially or completely compensated byappropriate control of the vacuum clamping of the substrate W to thesupport section 22. In particular, the under pressure around the burls20 may be arranged to vary across the substrate W such that the vacuumclamping force varies across the substrate W. This may be arranged, forexample, by the provision of multiple openings to the space around theburls 20 to an under pressure source used to provide the vacuum clampingand by way of appropriate valving, for example, controlling the pressureat each opening.

In an embodiment, as depicted in FIG. 17, the spacing of the burls 20and the total area of each burl 20 in contact with the lower surface ofthe substrate W may remain constant across the support section 22. Thismay be advantageous because it may prevent deformation of the substrateW when it is secured to the burls 20 caused by variations in thedistribution of support forces provided by the burls 20 resulting from adistribution of the total area of burls 20 in contact with the lowersurface of the substrate W per unit area of the substrate W across thesubstrate W.

In the arrangement depicted in FIG. 17, the resistance to transfer ofheat energy between the support section 22 and the substrate W isreduced in the outer region 24 in comparison with the inner region 25 byconfiguring the base surface of the support section 22 (from which theburls 20 protrude) such that the separation between the section 22 a ofthe base surface in the outer region 24 and the lower surface of thesubstrate W is less than the separation between the section 22 b of thebase surface of the support section 22 and the lower surface of thesubstrate W in the inner region 25.

By reducing the separation in the outer region 24, an increase in thethermal conductivity through the gas gap (which may be at lower thanambient pressure) may be provided. Multiple intermediate levels may beprovided for the base surface. Additionally or alternatively, a slopingsurface rather than a stepped surface (as shown) may be provided.

Alternatively or additionally, a reduction in the thermal resistance inthe outer region 24 through the gas gap between the support section 22and the lower surface of the substrate W may be decreased by the use ofmodified burls 40 in the outer region 24. As depicted in FIG. 18, themodified burls 40 may have a first portion 41 that is arranged to be incontact with the lower surface of the substrate W and may correspond tothe non-modified burls 20 used in the inner region 25. The modifiedburls may 40 further include a second portion 42 that protrudes lessfrom the base surface of the support section 22 than the first portion41 and therefore does not contact the lower surface of the substrate W.Accordingly, each of the second portions 42 of the modified burls 40provides an area in which the separation between the support section 22and the lower surface of the substrate W is reduced but does not affectthe total area of burls 20 per unit area of the lower surface of thesubstrate W that is in contact with the substrate W.

As shown in FIG. 18, the second portion 42 of each of the modified burls40 may surround the first portion 41. The size of the second portions 42need not be the same for all of the modified burls 40. Accordingly, forexample, the width and/or height of the second portions 42 of themodified burls may increase with distance from the center of the supportsection 22 such that the resistance to thermal transfer between thesupport section 22 and the substrate W decreases towards the edge of thesubstrate W.

Alternatively or additionally, as depicted in FIG. 19, the supportsection 22 may include one or more protrusions 45 provided between theburls 20. The protrusions 45 may be arranged such that they do notadjoin any of the burls 20. This may facilitate manufacturing thesupport section 22. However, by providing local areas within the outerregion 24 in which the separation between the upper most surface of thesupport section 22 and the lower surface of the substrate W is reduced,the resistance to transferring heat energy between the support section22 and the substrate W through the gas gap may be reduced. In turn, theresistance to transfer of heat energy between the support section 22 andthe substrate W may be lower in the outer region 24 than in the innerregion 25.

In an embodiment, at least one protrusion 45 may be configured such thatits upper surface forms an annulus extending around the outer region 24of the support section 22, namely encompassing the inner region 25. Thismay facilitate manufacture.

In an embodiment, a protrusion 45 may be configured such that the uppersurface substantially forms an annulus extending (e.g., a series ofconcentric rings) around the outer region 24 of the support section 22but is divided into a plurality of sections. This provides a pluralityof openings to help ensure easy flow of gas between the two sides of theprotrusion 45. This may ensure that local reductions in the underpressure used for vacuum clamping a substrate W to the support section22 is minimized.

As is discussed further below, in an embodiment, the protrusions 45 maybe provided distributed over the entire upper surface of the supportsection 22, namely in both the outer region 24 and the inner region 25.In such an arrangement, the protrusions 45 may be configured as a seriesof concentric rings, which may each have a plurality of openings asdiscussed above. In such an arrangement, the burls 20 may be arrangedbetween adjacent concentric rings of protrusions 45. Provision of suchan arrangement may facilitate manufacture of the support section 22.

In an embodiment, at least one protrusion 45 may be configured such thatthe separation between the upper surface of the protrusion 45 and thelower surface of a substrate W supported by the support section 22 is 10μm or less. In such an embodiment, the separation of the base surface ofthe support section 22 from the lower surface of the substrate W may be150 μm. Alternatively, the separation between the base surface of thesupport section 22 and the lower surface of the substrate W may belarger, for example 400 μm or more. In an embodiment having a pluralityof protrusions 45, approximately 50% of the area of the lower surface ofa substrate W may be directly above a protrusion 45. Accordingly, thethermal conductivity between the support section 22 and the substrate Wmay be improved. In particular, the thermal transfer may be increased bya factor of approximately 2 to 3, all other factors remaining constant.

In an embodiment, as depicted in FIG. 20, the position and size of theprotrusion 45 may be selected such that, during use of the support tablein an immersion lithographic apparatus, a thin layer of immersion fluidis arranged between the upper surface of the protrusion 45 and the lowersurface of the substrate W.

This thin layer of immersion fluid may significantly reduce theresistance to heat transfer between the support section 22 and thesubstrate W without providing a physical restraint on the substrate Wsuch as would be the case if the protrusion 45 were in physical contactdirectly with the substrate W.

In an embodiment, the protrusion 45 may be located between two seals 47that are arranged to prevent or limit the transfer of immersion fluidunder the substrate W from the edge of the substrate W towards thecenter of the substrate W. The two seals 47 may be formed from annularprotrusions that extend to a position sufficiently close to theunderside of the substrate as to provide the desired sealingfunctionality. In an embodiment, the protrusion 45 is not annular so asto help ensure that the pressure in the region between the two seals 47is uniform. For example the protrusion 45 may be arranged in aperipheral (e.g., circumferential) path that has one or more openingsbetween parts of the protrusion to connect the region between theinnermost seal 47 and the protrusion 45 to the region between theoutermost seal 47 and the protrusion 45. In this location, for example,during use, immersion fluid may be drawn towards the protrusion 45 bythe under pressure provided around the burls 20 that is used to vacuumclamp the substrate W to the support section 22. The height of theprotrusion 45 relative to the lower surface of the substrate W may beselected such that the gap between the top of the protrusion 45 and thelower surface of the substrate W is such that the immersion fluid isretained in the gap. In particular, the size of the gap may be selectedsuch that the capillary pressure holding the immersion fluid in the gapis greater than the difference in gas pressure across the protrusion 45that may be caused by the under pressure used to vacuum clamp thesubstrate W to the support section 22.

In an embodiment, a fluid other than a fluid that has been provided forthe performance of immersion lithography may be provided to theprotrusion 45. Accordingly, a supply of an appropriately selected fluidmay be provided to the protrusion 45.

In an embodiment, a difference in the resistance to transferring heatbetween the support section 22 and the substrate W across the supportsection 22 may be effected by control of the upper surface of the burls20, namely the surface that is in contact with the substrate W. Forexample, as described in FIG. 21, the burls 20 may be configured suchthat the surface roughness of the upper surfaces of the burls 20 is lessfor burls in the outer region 24 than in the inner region 25.

This difference in surface roughness may be achieved, for example, byutilizing improved polishing for the upper surfaces of the burls 20 inthe outer region 24 in comparison with the burls 20 in the inner region25. Alternatively or additionally, surface roughness may be induced inthe upper surface of the burls 20 in the inner region 25, for example byscratching or etching.

The difference in surface roughness of the upper surfaces of the burls20 across the support section 22 may result in a variation of thedeformation of the burls 20 caused by the vacuum clamping of thesubstrate W to the support section 22, similar to the variation indeformation caused by a distribution of the total area of burls 20 incontact with the lower surface of the substrate W as discussed above.Accordingly, as described above, this may be partially or completelycompensated by provision of a vacuum clamping arrangement as describedabove in which there is a distribution across the substrate W of theunder pressure used to provide the vacuum clamping.

In an embodiment, a difference in the resistance to transferring heatbetween the support section 22 and the substrate W across the supportsection 22 may be effected by use of different gases between the supportsection 22 and the substrate W in different regions. In particular, inan embodiment, a higher thermal conductivity gas is provided to thespace between the outer region 24 of the support section 22 and theouter region 26 of the substrate W than is provided to the space betweenthe inner region 25 of the support section 22 and the inner region 27 ofthe substrate W. In an embodiment, the relatively high thermalconductivity gas comprises He (helium), H₂ (hydrogen), a mixture of Heand H₂, a gas comprising water vapor, another gas or any combination ofthe above. In an embodiment, the gas may comprise any of the aboveand/or at least one of the following: air, argon and/or nitrogen.

FIG. 25 depicts an embodiment comprising a gas handling system 70 toprovide the relatively high thermal conductivity gas to the spacebetween the support section 22 and the outer region 26 of the substrateW. For clarity, the burls supporting the substrate W are not shown.

The gas may be supplied to the space by a supply line 71 and withdrawnby gas extraction lines 72 that are provided on either side of the spacedefined by the outer region 26 of the substrate W. Accordingly, therelatively high thermal conductivity gas may be substantially retainedin the space between the support section 22 and the outer region 26 ofthe substrate W. Such an arrangement may provide higher thermalconductivity between the support section 22 and the outer region 26 ofthe substrate W than between the support section 22 and the inner region27 of the substrate W.

In an embodiment, the gas supply line 71 and the gas extraction lines 72are each connected to a plurality of respective ports 73 in the uppersurface of the support section 22. Each gas supply line 71 or gasextraction line 72 may be connected to a plurality of ports 73. Inparticular, the gas extraction lines 72 may be connected to a pluralityof ports 73 provided along the boundary of the space corresponding tothe outer region 26 of the substrate W.

In an embodiment, flow resisting structures 74 may be provided on eitherside of the ports 73 connected to the gas extraction lines 72 in orderto restrict the flow of gas to or from the space to which the highthermal conductivity gas is provided.

As depicted in FIG. 25, a gas handling system 70 may be provided inorder to supply the relatively high thermal conductivity gas to thespace between the support section and the outer region 26 of thesubstrate. In an embodiment, a second gas supply system, that may besimilar, may be provided to supply a different gas to the space betweenthe support section 22 and the inner region 27 of the substrate, namelya gas having a lower thermal conductivity than the gas provided to thespace between the support section 22 and the outer region 26 of thesubstrate W. This may facilitate control of the gas in the space betweenthe support section 22 and the substrate W in the inner and outerregions 27, 26. Both gases may have a higher thermal conductivity thanwould be the case if neither gas supply system were provided oroperated.

In the embodiments discussed above, there are provided a variety of waysin which the heat transfer to or from the substrate per unit area of thesubstrate as a result of the operation of the conditioning system can beimproved in a particular region. In particular, the heat transfer to orfrom the substrate per unit area of the substrate as a result of theoperation of the conditioning system may be arranged to be greater in afirst region of the substrate, adjacent to an edge of the substrate,than it is in a second region of the substrate, at the center of thesubstrate. Combinations of these arrangements may be used.

Furthermore, in the absence of manufacturing difficulties and/orconstraints, the arrangements discussed above to improve the heattransfer to or from the substrate as a result of the operation of theconditioning system may be applied all over the support section with aview to reducing or minimizing a temperature change of the supportsection and/or the substrate. In such an embodiment, it may be possibleto reduce a temperature change to an extent such that an undesirableeffect is reduced to an acceptable level. Therefore, in embodiments, oneor more of the arrangements described above to improve the heat transferto or from the first region of the substrate may be applied all over thesupport section, namely in both the inner and outer regions 25, 24 ofthe support section 22.

Similarly, in an embodiment, one or more of the above-describedarrangements to improve the heat transfer to or from the substrate maybe applied to the region of the support section corresponding to thesecond region of the substrate, namely the inner region of thesubstrate. For example, a first arrangement to improve the heat transferto or from the substrate may be utilized in respect of the first regionof the substrate but it may not be practical or economic to utilize itall over the support section. In that case, a different one of theabove-described arrangements to improve the heat transfer to or from thesubstrate may be utilized in respect of the second region of thesubstrate. The second arrangement may not, for example, improve the heattransfer to or from the substrate to the same extent as the firstarrangement utilized in respect of the first region of the substrate butmay be simpler to provide and/or more cost-effective.

In an embodiment, which may be combined with any of the above describedembodiments, the support section may be configured to reduce the effectof increased sensitivity to thermal variation of the outer region of asubstrate, adjacent an edge of the substrate, in comparison to the innerregion of the substrate, at the center of the substrate.

In an embodiment, this may be achieved by configuring the supportsection to include an upper surface comprising a base surface that issubstantially parallel to the lower surface of the substrate to besupported, and a plurality of burls protruding from the base surface.The support section may be configured such that only the upper surfaceof the burls is in contact with a substrate when it is supported by thesupport section. In an embodiment, the burls are further configured suchthat the stiffness of the burls in a direction parallel to the upperface of the support section is greater for the burls in contact with theouter region 26 of the substrate than for burls in contact with theinner region 27 of the substrate W. This increased stiffness of each ofthe burls in the direction parallel to the major face of the substratemay be selected in order to compensate for the fact that a region of thesubstrate at an edge of the substrate does not have burls in contactwith the substrate extending in every direction around the region due tothe finite extent of the substrate, as discussed above.

In an embodiment, the burls may be configured such that the stiffness ofthe burls in a direction perpendicular to the upper face of the supportsection is substantially the same for the burls in contact with both theouter region of the substrate and the inner region of the substratenotwithstanding the fact that the stiffness is different in a directionparallel to the upper face of the support section. This may reduce localheight variations of the substrate when it is clamped, for examplevacuum clamped, to the support section. During such clamping, thesubstrate will exert a force on each of the burls in the directionperpendicular to the upper face of the support section, resulting in asmall deformation that is proportional to the stiffness of the burl inthis direction.

In an embodiment, the burls in contact with the outer region of thesubstrate may be configured such that the direction in which thestiffness of the burls is greater than the burls in contact with theinner region of the substrate is a radial direction. By radial directionis meant a direction away from the center of the substrate, which maygenerally be round. However, in the case of a non-round substrate, thedirection would still be away from the center of the substrate.Therefore, this direction is different for burls in contact withdifferent parts of the outer region of the substrate.

FIG. 23 depicts, in plan view, a plurality of burls on a support section22 according to an embodiment. As shown, a plurality of burls 65 of afirst type are provided to be in contact with the first region of asubstrate W and a plurality of burls 66 of a second type are provided tobe in contact with the second region of the substrate W.

The burls 65 of the first type have a cross-section (in a plane parallelto the upper surface of the support section 22) that is elongate in aradial direction 67, namely away from the center of the substrate W. Onthe other hand, the burls 66 of the second type have a conventionalcircular cross-section. Consequently, the burls 65 of the first type maybe stiffer in the radial direction 67 than the burls 66 of the secondtype, even if all of the burls 65, 66 have the same cross-sectionalarea. In an embodiment, the burls 65, 66 of the two types may beconfigured to have substantially the same cross-sectional area to helpensure that all of the burls 65,66 have substantially the same stiffnessin a direction perpendicular to the base surface of the support section22.

Alternatively or additionally, a similar effect may be provided byconfiguring the support section 22 such that the burls 20 in the outerregion 24 of the support section 22 have an upper surface with a lowersurface roughness than the burls 20 in the inner region 25 of thesupport section 22, as depicted in FIG. 21 and discussed above. Reducingthe surface roughness increases the area of the burl in contact with thesubstrate, in turn increasing the stiffness of the local contact betweenthe burl and the substrate. Accordingly, such an arrangement may provideboth the benefit of providing increased heat transfer between thesubstrate W and the support section 22 in the outer region 26 of thesubstrate and reducing the effect of a temperature fluctuation in theouter region 26 of the substrate W in comparison with the inner region27 of the substrate W.

Alternatively or additionally, in an embodiment, depicted in FIG. 24,the burls 68 in contact with the outer region 26 of the substrate W,namely those in the outer region 24 of the support section 22, may betapered such that the cross-sectional area of the burls 68 decreases ina direction away from the base surface of the support section 22. Forexample, the burls 68 may be frustro-comical in shape. By use of such aconfiguration, the buds 68 in contact with the outer region 26 of thesubstrate W may be configured to have substantially the same stiffnessin a direction perpendicular to the base surface of the support section22 as burls 69 in contact with the inner region 27 of the substrate W,which may for example have a conventional shape, but may have greaterstiffness in a direction parallel to the base surface of the supportsection. In an embodiment, the burls 69 in contact with the inner region27 of the substrate W may be substantially cylindrical in shape.

A problem for conditioning systems used in lithographic apparatus may bethe response time. It may, for example, be desirable to minimize orreduce variations of the temperature of the substrate. However, it maynot be possible to detect these variations directly. Accordingly, it maybe necessary to monitor the temperature of the support section 22 of thesupport table WT supporting the substrate W. If, for example, it ismeasured that the temperature of the support section 22 is dropping, itmay be determined this is caused by a drop in the temperature of thesubstrate W and the conditioning system 21 may be controlledappropriately in order to provide heat to raise the temperature.

However, there is a delay between the temperature of the substrate Wdropping and the consequent dropping of the temperature of the supportsection 22.

Alternatively or additionally, a delay may be introduced by theconditioning system 21 itself. In particular, once it has beendetermined that heat should be provided by the conditioning system 21 orremoved by the conditioning system 21, there may be a delay before theheat transfer is effected. For example, in a conditioning system 21utilizing a flow of a conditioning fluid through a channel within thesupport section 22, there will be a delay between the point at which itis determined that conditioning is required and the time at whichappropriately heated or cooled conditioning fluid passes through thesupport table WT. Furthermore, a further delay may occur due to the timetaken for the heat to transfer between the support section 22 of thesupport table WT and the substrate W itself.

Such delays in the response between the temperature change of thesubstrate and heat being provided to or removed from the substrate mayresult in greater temperature fluctuations of the substrate.

In an embodiment, as depicted in FIG. 8, the conditioning system 21 maybe controlled by a controller 31 that may provide improved control ofthe conditioning system 21. In the arrangement depicted, thelithographic apparatus further includes a position measurement system50, configured to measure the position of the support table WT withinthe lithographic apparatus. This position measurement system 50 may be aposition measurement system that is provided in order to control theactuator system used to move the support table WT. Alternatively, theposition measurement system 50 used to control the conditioning systemmay be a separate position measurement system that is not used as partof the control of the movement of the support table WT.

The controller 31 may be configured to control the conditioning system21 to provide heat energy to and/or remove heat energy from the supporttable WT based on information that includes the measured position of thesupport table WT. For example, the controller may be pre-programmed suchthat at specific positions of the support table WT, a certain amount ofheat energy is provided to or removed from the support table WT by theconditioning system.

For such an arrangement, the controller 31 may include a memory 51 inwhich to store data corresponding to an amount of heat expected to berequired to be supplied and/or removed by the conditioning system 21 forone or more locations of the support table WT.

Accordingly, it may be known that when the support table WT is in aparticular location a given amount of cooling will occur at thesubstrate W (for example caused by the operation of an immersion fluidhandling system). Therefore, the controller 31 may be configured tosupply an appropriate amount of heat energy to the support table WT inorder to compensate for the cooling.

The system may therefore be configured such that the conditioning system21 can provide heat energy to the support table WT and/or remove heatenergy from the support table to provide the desired heat transferbetween it and the substrate W without waiting for a measuredtemperature response, of, for example, the support table WT.

In an embodiment, the memory 51 may include data corresponding to theexpected movements of the support table WT during the processing of asubstrate W and the amount of heat energy expected to be supplied and orremoved by the conditioning system 21 during the expected movements.Based on this data, the controller 31 may be better able to predict thedesired heating and/or cooling of the support table WT.

In particular, for example, a problem of overshoot may be avoided. Forexample, the data within the memory 51 of the controller 31 may permitthe controller 31 to stop supplying heat from the conditioning system 21to the support table WT to compensate for cooling caused by an immersionfluid handling system shortly before the support table WT is moved awayfrom the immersion fluid handling system. Due to the delay in heattransfer from the conditioning system 21 through the support table WT tothe substrate W, during the final stages of operation of the fluidhandling system (which may cool the substrate W), heat will continue tobe supplied to the substrate W. However, with appropriately arrangedtiming, at the point at which the cooling effect ceases on the substrateW, heat may cease to be substantially provided to the substrate W fromthe conditioning system 21 via the support table WT. In contrast,without such a predictive system, heat would be continued to be providedto the substrate table WT until a rise in the temperature of thesubstrate table is measured, resulting from an earlier rise in thetemperature of the substrate W following the end of cooling. Thereafterheat would continue to be supplied to the substrate W from the substratetable WT until the temperature of the substrate table WT and thesubstrate W equalize. This may result in an overshoot of the temperatureof the substrate W.

Although the controller 31 may be arranged primarily to be predictive(i.e. using feedforward) based on the position of the support table WT,one or more temperature sensors 52 may be provided, for example, withinthe support section 22 of the support table WT, as depicted in FIG. 8.Accordingly, the controller 31 may utilize the information from thetemperature sensor 52 in order to refine the control of the conditioningsystem (i.e. may include a feedback loop).

For example, the controller 31 may modify the commands to theconditioning system 21 to supply and/or remove heat energy from thesupport section 22 of the support table WT using the measuredtemperature at each instant. Alternatively or additionally, thecontroller 31 may use historical data measured by the temperature sensor52 in order to update the information in the memory 51 used for controlof the conditioning system 30 during the processing of a subsequentsubstrate W.

A plurality of temperature sensors 52 may be provided, for example,distributed across the support section 22 of the support table WT and/orused to measure the temperature of the substrate W directly.Furthermore, the conditioning system 21 may be configured such that theamount of heat supplied to and/or removed from a plurality of differentregions of the support table WT can be independently controlled by thecontroller 31 in response to the position of the support table WT.

In an embodiment, the controller 31 may be configured such that, whenthe support table is provided to a location within the lithographicapparatus for a substrate W to be loaded to the support table WT, thecontroller 31 may control the conditioning system 21 to start to supplyheat energy to and/or remove heat energy from the support table WTbefore the substrate W is loaded to the support table WT. The controller31 may be configured such that the conditioning system 21 starts tosupply an amount of heat energy to and/or remove heat energy from thesupport table WT that is expected to be required for the substrate W.This may avoid or reduce the delay resulting from heat having to passthrough the support table WT to transfer between the conditioning system21 and the substrate W. Accordingly, at the time at which a substratethat has just been loaded to the support table WT encounters a heatload, the requisite heat flow is provided to or from the substrate W bythe support section 22 of the support table WT as a result of the heatflow provided to or from the conditioning system 21 to the supportsection 22 of the support table WT before the substrate W was loaded tothe support table WT.

In an embodiment, the amount of heat provided to and/or removed from thesupport table WT by the conditioning system 21 before the substrate isloaded to the support table may be based on a measured temperature ofthe substrate W.

In an embodiment as depicted in FIG. 22, the measurement of thetemperature of the substrate W prior to it being loaded to the supporttable WT may be measured while the substrate W is being handled by asubstrate handling apparatus 60. Accordingly, the temperaturemeasurement of the substrate W may be provided to the controller 31 insufficient time for it to control the heat energy provided to and/orremoved from the support section 22 of the support table WT by theconditioning system 21, as discussed above.

In an embodiment, the substrate handling apparatus 60 may include one ormore temperature sensors 61. For example, the one or more temperaturesensors 61 may contact the substrate W when it is held by the substratehandling apparatus 60.

Alternatively or additionally, a non-contact temperature sensor, such asan infrared camera may be arranged such that it can measure thetemperature of the substrate W while it is handled by the substratehandling apparatus 60. For example, such a non-contact temperaturesensor may be mounted to the substrate handling apparatus 60.Alternatively, the non-contact temperature sensor may be mounted toanother part of the lithographic apparatus but may be arranged such thatthe substrate handling apparatus 60 moves the substrate W past thenon-contact temperature sensor during the process of loading thesubstrate W to the support table WT.

Regardless of the nature of the temperature sensor, the system may beconfigured to utilize a single temperature measurement for the substrateW.

Alternatively, a plurality of temperature measurements may be madeacross the substrate W. This may be beneficially used if theconditioning system 21 is configured to independently control the heatenergy provided to and/or removed from different regions of the supporttable WT. In that case, each part of the conditioning system 21 may beindependently controlled based on the initial temperature of thesubstrate W.

If a plurality of separate temperature sensors 61 are provided, aseparate temperature sensor 61 may be provided corresponding to eachsection of the conditioning system 21. Alternatively, if, for example,an infrared camera is utilized, an image of the entire substrate W maybe obtained and a plurality of sections of the image may be separatelyanalyzed in order to provide the requisite control for each section ofthe conditioning system 21.

In an embodiment, there is provided a support table for a lithographicapparatus, the support table comprising: a support section, configuredto support a lower surface of a substrate on an upper face thereof; anda conditioning system, configured to supply heat energy to and/or removeheat energy from the support section; wherein, when a substrate issupported by the support section, it is thermally coupled to the supportsection such that, when the conditioning system supplies heat energy toor removes heat energy from the support section, energy in turntransfers from the support section to the substrate or to the supportsection from the substrate, respectively; and the support section, theconditioning system, or both, is configured such that the heat transferto or from the substrate per unit area of the substrate as a result ofthe operation of the conditioning system is greater in a first region ofthe substrate that is adjacent the edge of the substrate than it is in asecond region of the substrate that is at the center of the substrate.

In an embodiment, the conditioning system comprises a heater system,configured such that it can provide to the support section more heatenergy per unit area of the upper face of the support section in a firstregion of the support section, thermally coupled to the first region ofthe substrate, than in a second region of the support section, thermallycoupled to the second region of the substrate. In an embodiment, theheater system comprises a plurality of independently controllable heaterunits; and at least one heater unit is provided in the first region ofthe support section and at least one other heater unit is provided inthe second region of the support section. In an embodiment, the heatersystem comprises an elongate electric heating element arranged such thatthere is a greater length of heating element per unit area of the upperface of the support section in the first region of the support sectionthan in the second region of the support section. In an embodiment, theconditioning system comprises a channel within the support section,configured to convey a conditioning fluid; and the channel is configuredto pass through a first region of the support section, thermally coupledto the first region of the substrate, and a second region of the supportsection, thermally coupled to the second region of the substrate. In anembodiment, the cross-sectional area of the channel is smaller in thefirst region of the support section than in the second region of thesupport section. In an embodiment, the surface roughness of the channelis greater in the first region of the support section than in the secondregion of the support section. In an embodiment, the channel has agreater number of corners and/or has sharper corners in the first regionof the support section than in the second region of the support section.In an embodiment, the perimeter of the cross-section of the channel isgreater in the first region of the support section than in the secondregion of the support section. In an embodiment, the separation betweena first section of the channel and an adjacent second section of thechannel is less in the first region of the support section than in thesecond region of the support section. In an embodiment, the total volumeof the channel corresponding to a given area of the upper face of thesupport section is greater in the first region of the support sectionthan in the second region of the support section. In an embodiment, thesupport table further comprises a channel heater configured to supplyheat to the conditioning fluid in the channel. In an embodiment, thechannel heater is configured to supply heat to a greater proportion ofthe surface area of the channel in the first region of the supportsection than in the second region of the support section. In anembodiment, the channel heater comprises a plurality of heaters and thespatial density of the plurality of heaters is larger in the firstregion of the support section than in the second region of the supportsection. In an embodiment, the conditioning system is configured suchthat conditioning fluid is provided to an end of the channel locatedwithin the first region of the support section and extracted from an endof the channel located within the second region of the support section.In an embodiment, the upper face of the support section comprises a basesurface, configured to be substantially parallel to a lower surface of asubstrate supported on the support section, and a plurality of burls,protruding from the surface, wherein, when a substrate is supported bythe support section, it is only in contact with the upper surface of theburls. In an embodiment, the support section is configured such that thetotal area of burls in contact with a substrate that is supported by thesupport section per unit area of the substrate is greater in the firstregion of the substrate than in the second region of the substrate. Inan embodiment, the upper surface of each of the burls in contact withthe first region of a substrate supported by the support section islarger than the upper surface of each of the burls in contact with thesecond region of the substrate. In an embodiment, the number of burls incontact with a substrate supported by the support section per unit areaof the substrate is larger in the first region of the substrate than inthe second region of the substrate. In an embodiment, the supportsection is configured such that the separation between the base surfaceand a substrate supported by the support section is smaller for thefirst region of the substrate than for the second region of thesubstrate. In an embodiment, at least one burl arranged to be in contactwith the first region of a substrate supported by the support sectioncomprises a first portion that includes an upper surface configured tocontact the substrate and a second portion that protrudes from the basesurface less than the first portion. In an embodiment, the upper surfaceof the support section further comprises a projection arranged in afirst region of the upper face that is configured to be thermallycoupled to the first region of a substrate supported by the supportsection, the projection configured such that it protrudes away from thebase surface less than the burls. In an embodiment, the projection isconfigured such that it forms an annulus that surrounds a second regionof the support section that is arranged to be thermally coupled to thesecond region of a substrate supported by the support section. In anembodiment, the projection is configured such that, in use, a layer offluid is retained on the projection and in contact with a substratesupported on the support section. In an embodiment, the upper surface ofburls in contact with the first region of the substrate supported by thesupport section is configured to have a lower surface roughness than theupper surface of burls in contact with the second region of thesubstrate. In an embodiment, the support table further comprises a gashandling system configured to provide a gas to a space between thesupport section and the first region of the substrate that has higherthermal conductivity than a gas in the space between the support sectionand the second region of the substrate. In an embodiment, the gasprovided to the space between the support section and the first regionof the substrate comprises at least one selected from the following: He,H₂ and/or water vapor.

In an embodiment, there is provided a support table for a lithographicapparatus, the support table comprising: a support section, configuredto support a lower surface of a substrate on an upper surface of thesupport section, the upper surface of the support section comprising abase surface, configured to be substantially parallel to the lowersurface of the substrate when supported on the support section, andcomprising a plurality of burls protruding from the base surface andarranged such that, when the substrate is supported by the supportsection, the substrate is only in contact with the upper surface of theburls, wherein the burls are configured such that the stiffness of theburls in a direction parallel to the upper surface of the supportsection is greater for burls in contact with a first region of thesubstrate that is adjacent to an edge of the substrate than for burls incontact with a second region of the substrate that is at the center ofthe substrate, and the stiffness of the burls in a directionperpendicular to the upper face of the support section is substantiallythe same for burls in contact with the first and second regions of thesubstrate.

In an embodiment, the stiffness of the burls is compared for a radialdirection oriented away from the center of the substrate. In anembodiment, the burls in contact with the first region of the substratehave a cross section such that their length in a radial direction, awayfrom the center of the substrate, is greater than their width in atangential direction, perpendicular to the radial direction. In anembodiment, a cross sectional area of the burls in contact with thefirst and second regions of the substrate is the same. In an embodiment,the burls in contact with the first region of the substrate have adecreasing cross sectional area in a direction away from the basesurface of the support section. In an embodiment, the upper surfaces ofburls in contact with the first region of the substrate have a lowersurface roughness than the upper surfaces of burls in contact with thesecond region of the substrate.

In an embodiment, there is provided a lithographic apparatus comprisinga support table as described herein.

In an embodiment, there is provided a device manufacturing method,comprising transferring a pattern from a patterning device to asubstrate using a lithographic apparatus as described herein.

In an embodiment, there is provided a lithographic apparatus,comprising: a support table, configured to support a substrate; aconditioning system, configured to supply heat energy to and/or removeheat energy from the support table; a position measurement system,configured to measure the position of the support table within thelithographic apparatus; and a controller, configured to control theconditioning system to supply heat energy to and/or remove heat energyfrom the support table based on information including the measuredposition of the support table.

In an embodiment, the controller comprises a memory, in which is storeddata corresponding to an amount of heat energy expected to be requiredto be supplied and/or removed by the conditioning system for aparticular location of the support table; and the controller isconfigured to control the conditioning system based on the data. In anembodiment, the memory further comprises data corresponding to theexpected movements of the support table within the lithographicapparatus during processing of a substrate and the amount of heat energyexpected to be supplied and/or removed by the conditioning system duringthe expected movements. In an embodiment, the amount of heat expected tobe required to be supplied to and/or removed by the conditioning systemis based on expected heat loading on the support table and a substratesupported by the substrate at each location of the support table and/orduring each movement, offset by an expected delay for heat energy totransfer between the conditioning system and the substrate and/orsubstrate table. In an embodiment, the lithographic apparatus furthercomprises a temperature sensor to measure the temperature of at leastpart of the support table and/or at least part of a substrate supportedon the support table, wherein the controller is configured such that itcontrols the conditioning system based on information further comprisinga temperature measurement from the temperature sensor. In an embodiment,the conditioning system is configured such that the amount of heatsupplied to and/or removed from a plurality of different regions of thesupport table can be independently controlled by the controller. In anembodiment, the controller is configured such that, when the supporttable is at a location for a substrate to be loaded to the supporttable, it controls the conditioning system to start to supply heatenergy to and/or remove heat energy from the support table that isexpected to be required before the substrate is loaded to the supporttable.

In an embodiment, there is provided a lithographic apparatus,comprising: a support table, configured to support a substrate; aconditioning system, configured to supply heat energy to and/or removeheat energy from the support table; and a controller, configured tocontrol the conditioning system to supply heat energy and/or remove heatenergy from the support table, the controller configured such that, whenthe support table is at a location for a substrate to be loaded to thesupport table, it controls the conditioning system to start to supplyheat energy to and/or remove heat energy from the support table that isexpected to be required before the substrate is loaded to the supporttable.

In an embodiment, the lithographic apparatus further comprises: asubstrate handling apparatus, configured to load a substrate to thesubstrate table; and a temperature sensor, configured to measure thetemperature of at least a part of a substrate being handled by thesubstrate handling apparatus, wherein the controller uses the measuredtemperature of the substrate to determine the heat energy expected to berequired to be supplied to and/or removed from the support table. In anembodiment, the temperature sensor is configured to measure thetemperature of a plurality of parts of the substrate.

In an embodiment, there is provided a device manufacturing method,comprising using a lithographic apparatus to transfer a pattern from apatterning device to a substrate, wherein the lithographic apparatuscomprises a support table configured to support the substrate, aconditioning system configured to supply heat energy to and/or removeheat energy from the support table, and a position measurement systemconfigured to measure the position of the support table within thelithographic apparatus, the method comprising controlling theconditioning system to supply heat energy to and/or remove heat energyfrom the support table based on information including the measuredposition of the support table.

In an embodiment, there is provided a device manufacturing method,comprising using a lithographic apparatus to transfer a pattern from apatterning device to a substrate, wherein the lithographic apparatuscomprises a support table configured to support the substrate, and aconditioning system configured to supply heat energy to and/or removeheat energy from the support table, the method comprising controllingthe conditioning system to supply heat energy to and/or remove heatenergy from the support table that is expected to be required before thesubstrate is loaded to the support table.

As will be appreciated, any of the above described features can be usedwith any other feature and it is not only those combinations explicitlydescribed which are covered in this application. For example, anembodiment of the invention could be applied to the embodiments of FIGS.2 to 4. Furthermore, discussions herein of heating or heaters should beunderstood to encompass cooling or coolers, respectively.

Furthermore, although the invention has been described above in thecontext of an immersion lithographic apparatus for convenience, it willbe appreciated that the invention may be used in conjunction with anyform of lithographic apparatus.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 248, 193, 157 or 126 nm). The term“lens”, where the context allows, may refer to any one or combination ofvarious types of optical components, including refractive and reflectiveoptical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the embodiments of the invention maytake the form of a computer program containing one or more sequences ofmachine-readable instructions describing a method as disclosed above, ora data storage medium (e.g. semiconductor memory, magnetic or opticaldisk) having such a computer program stored therein. Further, themachine readable instruction may be embodied in two or more computerprograms. The two or more computer programs may be stored on one or moredifferent memories and/or data storage media.

Any controllers described herein may each or in combination be operablewhen the one or more computer programs are read by one or more computerprocessors located within at least one component of the lithographicapparatus. The controllers may each or in combination have any suitableconfiguration for receiving, processing, and sending signals. One ormore processors are configured to communicate with the at least one ofthe controllers. For example, each controller may include one or moreprocessors for executing the computer programs that includemachine-readable instructions for the methods described above. Thecontrollers may include data storage medium for storing such computerprograms, and/or hardware to receive such medium. So the controller(s)may operate according the machine readable instructions of one or morecomputer programs.

One or more embodiments of the invention may be applied to any immersionlithography apparatus, in particular, but not exclusively, those typesmentioned above and whether the immersion liquid is provided in the formof a bath, only on a localized surface area of the substrate, or isunconfined. In an unconfined arrangement, the immersion liquid may flowover the surface of the substrate and/or substrate table so thatsubstantially the entire uncovered surface of the substrate table and/orsubstrate is wetted. In such an unconfined immersion system, the liquidsupply system may not confine the immersion liquid or it may provide aproportion of immersion liquid confinement, but not substantiallycomplete confinement of the immersion liquid.

A liquid supply system as contemplated herein should be broadlyconstrued. In certain embodiments, it may be a mechanism or combinationof structures that provides a liquid to a space between the projectionsystem and the substrate and/or substrate table. It may comprise acombination of one or more structures, one or more fluid openingsincluding one or more liquid openings, one or more gas openings or oneor more openings for two phase flow. The openings may each be an inletinto the immersion space (or an outlet from a fluid handling structure)or an outlet out of the immersion space (or an inlet into the fluidhandling structure). In an embodiment, a surface of the space may be aportion of the substrate and/or substrate table, or a surface of thespace may completely cover a surface of the substrate and/or substratetable, or the space may envelop the substrate and/or substrate table.The liquid supply system may optionally further include one or moreelements to control the position, quantity, quality, shape, flow rate orany other features of the liquid.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the claims set out below.

The invention claimed is:
 1. A support table for a lithographicapparatus, the support table comprising: a support section, configuredto support a lower surface of a substrate on an upper face thereof; anda conditioning system, configured to supply heat energy to and/or removeheat energy from the support section; and a control system structured orprogrammed to control the conditioning system to supply the heat energyto and/or remove the heat energy from the support section such thatthere is, at least during a radiation beam exposure process applied tothe substrate, heat transfer to or from the substrate per unit area ofthe substrate that is greater in a first region of the substrate that isadjacent the edge of the substrate and is on opposite sides of thecenter of the substrate for a given heat load and/or temperature changethan it is in a second region of the substrate that is at a centralportion of the substrate for the given heat load and/or temperaturechange.
 2. The support table according to claim 1, wherein theconditioning system comprises a heater system, configured such that itcan provide to the support section more heat energy per unit area of theupper face of the support section in a first region of the supportsection, thermally coupled to the first region of the substrate, than ina second region of the support section, thermally coupled to the secondregion of the substrate.
 3. The support table according to claim 2,wherein the heater system comprises a plurality of independentlycontrollable heater units; and at least one heater unit is provided inthe first region of the support section and at least one other heaterunit is provided in the second region of the support section.
 4. Thesupport table according to claim 2, wherein the heater system comprisesan elongate electric heating element arranged such that there is agreater length of heating element per unit area of the upper face of thesupport section in the first region of the support section than in thesecond region of the support section.
 5. The support table according toclaim 1, wherein the conditioning system comprises a channel within thesupport section, configured to convey a conditioning fluid; and thechannel is configured to pass through a first region of the supportsection, thermally coupled to the first region of the substrate, and asecond region of the support section, thermally coupled to the secondregion of the substrate.
 6. The support table according to claim 1,wherein the upper face of the support section comprises a plurality ofprotrusions, wherein, when a substrate is supported by the supportsection, it is only in contact with the upper surface of theprotrusions, and wherein the support section is configured such that thetotal area of protrusions in contact with a substrate that is supportedby the support section per unit area of the substrate is greater in thefirst region of the substrate than in the second region of thesubstrate.
 7. The support table according to claim 1, further comprisinga gas handling system configured to provide a gas to a space between thesupport section and the first region of the substrate that has higherthermal conductivity than a gas in the space between the support sectionand the second region of the substrate.
 8. A lithographic apparatuscomprising: a support table for a lithographic apparatus, the supporttable comprising a support section, configured to support a lowersurface of a radiation-sensitive substrate on an upper face thereof; aconditioning system, configured to supply heat energy to and/or removeheat energy from the support section; a control system structured orprogrammed to control the conditioning system to supply the heat energyto and/or remove the heat energy from the support section such thatthere is, at least during a radiation beam exposure process applied tothe substrate, heat transfer to or from the substrate per unit area ofthe substrate that is greater in a first region of the substrate that isadjacent the edge of the substrate and is on opposite sides of thecenter of the substrate for a given heat load and/or temperature changethan it is in a second region of the substrate that is at a centralportion of the substrate for the given heat load and/or temperaturechange; and a projection system configured to project a beam ofradiation onto the radiation-sensitive substrate.
 9. The lithographicapparatus according to claim 8, wherein the conditioning systemcomprises a heater system, configured such that it can provide to thesupport section more heat energy per unit area of the upper face of thesupport section in a first region of the support section, thermallycoupled to the first region of the substrate, than in a second region ofthe support section, thermally coupled to the second region of thesubstrate.
 10. The lithographic apparatus according to claim 9, whereinthe heater system comprises a plurality of independently controllableheater units; and at least one heater unit is provided in the firstregion of the support section and at least one other heater unit isprovided in the second region of the support section.
 11. Thelithographic apparatus according to claim 9, wherein the heater systemcomprises an elongate electric heating element arranged such that thereis a greater length of heating element per unit area of the upper faceof the support section in the first region of the support section thanin the second region of the support section.
 12. The lithographicapparatus according to claim 8, wherein the conditioning systemcomprises a channel within the support section, configured to convey aconditioning fluid; and the channel is configured to pass through afirst region of the support section, thermally coupled to the firstregion of the substrate, and a second region of the support section,thermally coupled to the second region of the substrate.
 13. Thelithographic apparatus according to claim 8, wherein the upper face ofthe support section comprises a plurality of protrusions, wherein, whena substrate is supported by the support section, it is only in contactwith the upper surface of the protrusions, and wherein the supportsection is configured such that the total area of protrusions in contactwith a substrate that is supported by the support section per unit areaof the substrate is greater in the first region of the substrate than inthe second region of the substrate.
 14. The lithographic apparatusaccording to claim 8, further comprising a gas handling systemconfigured to provide a gas to a space between the support section andthe first region of the substrate that has higher thermal conductivitythan a gas in the space between the support section and the secondregion of the substrate.
 15. A device manufacturing method comprising:supporting a lower surface of a substrate on an upper face of a supportsection of a support table; transferring heat energy to and/or from thesupport section using a conditioning system; applying a radiation beamexposure process to the substrate; and controlling the conditioningsystem to transfer the heat energy to and/or from the support sectionsuch that there is, at least during the radiation beam exposure process,heat transfer to or from the substrate per unit area of the substratethat is greater in a first region of the substrate that is adjacent theedge of the substrate and is on opposite sides of the center of thesubstrate for a given heat load and/or temperature change than it is ina second region of the substrate that is at a central portion of thesubstrate for the given heat load and/or temperature change.
 16. Themethod according to claim 15, wherein the conditioning system comprisesa heater system, and the controlling comprises using the heater systemto provide to the support section more heat energy per unit area of theupper face of the support section in a first region of the supportsection, thermally coupled to the first region of the substrate, than ina second region of the support section, thermally coupled to the secondregion of the substrate.
 17. The method according to claim 16, whereinthe heater system comprises a plurality of independently controllableheater units, and the controlling comprises using at least one heaterunit provided in the first region of the support section and using atleast one other heater unit provided in the second region of the supportsection.
 18. The method according to claim 16, wherein the heater systemcomprises an elongate electric heating element arranged such that thereis a greater length of heating element per unit area of the upper faceof the support section in the first region of the support section thanin the second region of the support section.
 19. The method according toclaim 15, wherein the conditioning system comprises a channel systemwithin the support section, configured to convey a conditioning fluid,and the controlling comprising using at least part of the channel systempassing through a first region of the support section, thermally coupledto the first region of the substrate, and using at least part of thechannel system passing through a second region of the support section,thermally coupled to the second region of the substrate.
 20. The methodaccording to claim 15, wherein the upper face of the support sectioncomprises a plurality of protrusions and the supporting comprisessupporting the substrate, when supported by the support section, by onlythe upper surface of the protrusions such that the total area ofprotrusions in contact with the substrate per unit area of the substrateis greater in the first region of the substrate than in the secondregion of the substrate.
 21. The method according to claim 15, furthercomprising providing a gas to a space between the support section andthe first region of the substrate that has higher thermal conductivitythan a gas in the space between the support section and the secondregion of the substrate.